Formation Mechanisms of GaN Nanowires Grown by Selective Area Growth Homoepitaxy
- 22 January 2015
- journal article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 15 (2), 1117-1121
- https://doi.org/10.1021/nl504099s
Abstract
This work provides experimental evidence and theoretical explanations regarding the formation mechanisms of GaN nanowires grown by selective area growth on GaN-on-sapphire templates. The first growth stage, driven by selective area growth kinetics, consists of initial nucleation (along the nanohole inner periphery), coalescence onset and full coalescence, producing a single nanocrystal within each nanohole. In the second growth stage, driven by free-surface-energy minimization, the formed nanocrystal undergoes morphological evolution, exhibiting initial cylindrical-like shape, intermediate dodecagonal shape and a final, thermodynamically stable hexagonal shape. From this point on, the nanowire vertical growth proceeds while keeping the stable hexagonal form.Keywords
This publication has 25 references indexed in Scilit:
- Crystallographically uniform arrays of ordered (In)GaN nanocolumnsJournal of Applied Physics, 2015
- Room-Temperature Triggered Single Photon Emission from a III-Nitride Site-Controlled Nanowire Quantum DotNano Letters, 2014
- Moore’s crystal ball: Device physics and technology past the 15nm generationMicroelectronic Engineering, 2011
- Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasksJournal of Crystal Growth, 2011
- Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrateApplied Physics Letters, 2010
- Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN NanocolumnsApplied Physics Express, 2008
- Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arraysJournal of Crystal Growth, 2008
- GaN Photonic-Crystal Surface-Emitting Laser at Blue-Violet WavelengthsScience, 2008
- The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)Journal of Crystal Growth, 1998
- Growth of Self-Organized GaN Nanostructures on Al2O3(0001) by RF-Radical Source Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1997