Electrical characterization of in situ Al:GaSb Schottky diodes grown by molecular beam epitaxy
- 1 September 1991
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 6 (9), 881-885
- https://doi.org/10.1088/0268-1242/6/9/008
Abstract
The electrical behaviour of epitaxial Al:GaSb Schottky diodes is modelled to highlight the importance of the effects of two-band electron conduction and recombination in the depletion region when deriving barrier heights from non-ideal I-V characteristics. The analysis reveals a Schottky barrier height to electrons in the Gamma conduction band minimum in the range 0.56 to 0.57 eV for n-type GaSb.Keywords
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