Photocapacitance of CdZnS/CuInSe2 thin-film heterojunctions
- 1 January 1986
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (1), 181-185
- https://doi.org/10.1063/1.336859
Abstract
The photocapacitance of a thin‐film CdZnS/CuInSe2 heterojunction was observed under white light excitation. Capacitance increases were observed that were indicative of minority‐carrier trapping in the junction. Emission spectroscopy indicated that a distribution of traps produce this signal. Analysis of the data indicate trap distributions ranging from 5×1014 cm−3 to 1.6×1015 cm−3 in the bulk and 3.3×1011 cm−2 at the surface. Photovoltaic efficiency was inversely related to the photocapacitance signal. A model relates deep electron interface states to a decrease in open‐circuit voltage.Keywords
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