Identification of AsGa antisite defects in liquid encapsulated Czochralski GaAs
- 1 May 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (9), 907-909
- https://doi.org/10.1063/1.94930
Abstract
We have identified the electron paramagnetic resonance (EPR) spectrum of the As on a Ga site (AsGa) defect in bulk undoped liquid encapsulated Czochralski grown GaAs. The intensity of the EPR signal can be correlated with the concentration of compensating carbon acceptors in the GaAs crystals. These results indicate that AsGa are responsible for the compensation of the undoped semi‐insulating material, and thus can be identified with the deep donor EL2 in such material.Keywords
This publication has 8 references indexed in Scilit:
- Shallow donor associated with the main electron trap (EL2) in melt-grown GaAsApplied Physics Letters, 1983
- Identification of AsGa antisites in plastically deformed GaAsJournal of Applied Physics, 1982
- Compensation Mechanism in Liquid Encapsulated Czochralski GaAs: Importance of Melt StoichiometryIEEE Transactions on Microwave Theory and Techniques, 1982
- Electron spin resonance of AsGa antisite defects in fast neutron-irradiated GaAsApplied Physics Letters, 1982
- Stoichiometry-controlled compensation in liquid encapsulated Czochralski GaAsApplied Physics Letters, 1982
- The observation of high concentrations of arsenic anti-site defects in electron irradiated n-type GaAs by X-band EPRSolid State Communications, 1981
- Submillimeter EPR evidence for the As antisite defect in GaAsSolid State Communications, 1980
- Photocapacitance quenching effect for “oxygen” in GaAsSolid State Communications, 1978