Shallow donor associated with the main electron trap (EL2) in melt-grown GaAs
- 1 July 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (1), 112-114
- https://doi.org/10.1063/1.94147
Abstract
A systematic analysis of Hall effect measurements on a large number of melt-grown GaAs crystals with different concentrations of the major deep trap (EL2) revealed the presence of a new shallow donor level (20–30 meV below the conduction band) with concentrations similar to those of the EL2. This finding indicates that the EL2 center is a double donor consisting of the deep EL2 donor at Ec−0.76 eV and a shallow donor state. The presence of the shallow donor state should have important consequences in the formulation of a compensation mechanism in semi-insulating GaAs.Keywords
This publication has 8 references indexed in Scilit:
- antisite defect in GaAsPhysical Review B, 1983
- Passivation of the dominant deep level (EL2) in GaAs by hydrogenApplied Physics Letters, 1982
- Current oscillations in semi-insulating GaAs associated with field-enhanced capture of electrons by the major deep donor EL2Applied Physics Letters, 1982
- Effects of stoichiometry on thermal stability of undoped, semi-insulating GaAsJournal of Applied Physics, 1982
- Compensation mechanism in liquid encapsulated Czochralski GaAs: Importance of melt stoichiometryIEEE Transactions on Electron Devices, 1982
- Origin of the 0.82-eV electron trap in GaAs and its annihilation by shallow donorsApplied Physics Letters, 1982
- Bridgman‐Type Apparatus for the Study of Growth‐Property Relationships: Arsenic Vapor Pressure ‐ GaAs Property RelationshipJournal of the Electrochemical Society, 1982
- Compensation mechanisms in GaAsJournal of Applied Physics, 1980