n-p junction ir detectors made by proton bombardment of epitaxial PbTe
- 1 November 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 21 (9), 411-413
- https://doi.org/10.1063/1.1654434
Abstract
Proton bombardment has been used to make n‐p junction ir detectors from epitaxial PbTe films on BaF2 substrates. When cooled at 77°K, these detectors are background limited at f/0.8; further reduction of the field of view gives Johnson‐noise‐limited peak detectivities of 6×1011 cm Hz1/2W−1 at f/20. The peak quantum efficiencies are 0.40–0.47.Keywords
This publication has 8 references indexed in Scilit:
- Injection luminescence and laser action in epitaxial PbTe diodesApplied Physics Letters, 1972
- Effect of Proton Bombardment on Pb0.76Sn0.24TeApplied Physics Letters, 1972
- Infrared Detection by Schottky Barriers in Epitaxial PbTeApplied Physics Letters, 1971
- High-Mobility Epitaxial Layers of PbTe and Pb1−xSnxTe Prepared by Post-Growth AnnealingJournal of Applied Physics, 1971
- n-p JUNCTION PHOTOVOLTAIC DETECTORS IN PbTe PRODUCED BY PROTON BOMBARDMENTApplied Physics Letters, 1971
- Epitaxial Growth of Lead Tin TellurideJournal of Applied Physics, 1970
- LASER EMISSION FROM METAL-SEMICONDUCTOR BARRIERS ON PbTe AND Pb0.8Sn0.2TeApplied Physics Letters, 1970
- n-p JUNCTION PHOTODETECTORS IN InSb FABRICATED BY PROTON BOMBARDMENTApplied Physics Letters, 1970