Room Temperature Operation of Al0.17Ga0.83Sb/GaSb Multi-Quantum Well Lasers Grown by Molecular Beam Epitaxy
- 1 February 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (2A), L94-96
- https://doi.org/10.1143/jjap.23.l94
Abstract
A room-temperature lasing-operation by current injection to Al0.17Ga0.83Sb/GaSb multi-quantum well (MQW) lasers grown by molecular beam epitaxy (MBE) is demonstrated. A pulsed threshold current density of 8.9 kA/cm2 was obtained for the diode whose active layer consists of 16 periods of 91 Å thick GaSb well layers separated by 31 Å thick Al0.17Ga0.83Sb barrier layers. The observed lasing energy (0.753 eV) is 27 meV higher than the energy gap of GaSb, indicating the quantum size effect.Keywords
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