Comparison of (CH4O2)bH2 and COH2 plasmas for low temperature diamond film deposition by electron cyclotron resonance plasma-assisted chemical vapor deposition
- 31 January 1994
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 3 (1-2), 105-111
- https://doi.org/10.1016/0925-9635(94)90039-6
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Deposition of diamond onto aluminum by electron cyclotron resonance microwave plasma-assisted CVDJournal of Materials Research, 1992
- Effects of oxygen and pressure on diamond synthesis in a magnetoactive microwave dischargeJournal of Applied Physics, 1992
- Diamond thin film growth on silicon at temperatures between 500 and 600 °C using an electron cyclotron resonance microwave plasma sourceSurface and Coatings Technology, 1991
- Low temperature and low pressure diamond synthesis in a microwave electron cyclotron resonance dischargeApplied Physics Letters, 1991
- Effects of Oxygen Addition on Diamond Film Growth by Electron-Cyclotron-Resonance Microwave Plasma CVD ApparatusJapanese Journal of Applied Physics, 1991
- Preparation and characterization of wide area, high quality diamond film using magnetoactive plasma chemical vapour depositionSurface and Coatings Technology, 1990
- Low-Temperature Synthesis of Diamond Films Using Magneto-Microwave Plasma CVDJapanese Journal of Applied Physics, 1990
- Growth of diamond films at low pressure using magneto-microwave plasma CVDJournal of Crystal Growth, 1990
- The Synthesis of Diamond Films at Lower Pressure and Lower Temperature Using Magneto-Microwave Plasma CVDJapanese Journal of Applied Physics, 1989
- Large Area Chemical Vapour Deposition of Diamond Particles and Films Using Magneto-Microwave PlasmaJapanese Journal of Applied Physics, 1987