Parallel Electron Transport and Field Effects of Electron Distributions in Selectively-Doped GaAs/n-AlGaAs
- 1 April 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (4A), L213
- https://doi.org/10.1143/jjap.22.l213
Abstract
It is demonstrated that a high electric field has large effects on the electron distribution and mobility in selectively doped GaAs/n-GaAs heterostructures. An increase of electron density in the AlGaAs layer has been found in the analysis of pulsed Hall effect and SdH oscillations at 4.2 K. At high fields, the mobility of two dimensional (2D) electrons has become slightly higher than the average mobility obtained by the pulsed Hall measurement. The velocity of 2D electrons reaches 3.8×107 cm/s at 4.2 K.Keywords
This publication has 9 references indexed in Scilit:
- Electrical Properties of Si-Doped AlxGa1-xAs Layers Grown by MBEJapanese Journal of Applied Physics, 1982
- Comparison of Single and Multiple Period Modulation Doped AlxGa1-xAs/GaAs Heterostructures for FETsJapanese Journal of Applied Physics, 1982
- High mobility of two-dimensional electrons at the GaAs/n-AlGaAs heterojunction interfaceApplied Physics Letters, 1980
- A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs HeterojunctionsJapanese Journal of Applied Physics, 1980
- Negative differential resistance through real-space electron transferApplied Physics Letters, 1979
- Electron mobilities in modulation-doped semiconductor heterojunction superlatticesApplied Physics Letters, 1978
- Shubnikov—de Haas Oscillations in a Semiconductor SuperlatticePhysical Review Letters, 1977
- Temperature Dependence of the Velocity-Field Characteristic in n-Type GaAsJournal of the Physics Society Japan, 1972
- Theory of an Experiment for Measuring the Mobility and Density of Carriers in the Space-Charge Region of a Semiconductor SurfacePhysical Review B, 1958