Dielectric properties of SrTiO3 thin films used in high T c superconducting field-effect devices

Abstract

The dielectric constant ■ of thin epitaxial SrTiO₃ films used as dielectric layers in high T_c superconducting field‐effect devices has been studied. ■ in these thin films was found to have much weaker dependence on temperature and applied electric field than the bulk material. The breakdown characteristics of gate structures containing SrTiO₃ dielectric layers are strongly influenced by the metal used as the gate electrode.