Monolithic integration of a GaAlAs injection laser with a Schottky-gate field effect transistor

Abstract

Monolithic integration of a GaAlAs laser with a GaAs Schottky‐gate field effect transistor is demonstrated. A GaAs field effect transistor with a 3‐μm gate length is formed on a double‐heterostructure laser crystal which is protected by a high‐resistivity isolation layer. Laser light intensity is modulated to realize rise and fall times of less than 0.4 ns by modulating the field effect transistor gate voltage.