I n s i t u x-ray photoelectron spectroscopic study of GaAs grown by atomic layer epitaxy
- 13 February 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (7), 656-657
- https://doi.org/10.1063/1.100909
Abstract
We carried out an in situ investigation of GaAs grown by atomic layer epitaxy, using an x‐ray photoelectron spectroscopy system combined with a metalorganic vapor phase epitaxial growth chamber, where Ga(CH3)3 and AsH3 were the source gases. It has been proved that Ga(CH3)n molecules (where n=1 or 2) are decomposed into Ga atoms after being adsorbed on the GaAs surface around 500 °C. This means that the self‐limited adsorption of Ga in the atomic layer epitaxy of GaAs can be achieved on the surface where the Ga adsorbate is atomic Ga.Keywords
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