The influence of stacking faults on leakage currents of FET devices
- 1 December 1971
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 10 (6), 467-470
- https://doi.org/10.1016/0026-2714(71)90105-3
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Feedback-Controlled X-Ray diffraction topographyPhysica Status Solidi (a), 1970
- Silicon material problems in semiconductor device technologyMicroelectronics Reliability, 1970
- Charge Coupled Semiconductor DevicesBell System Technical Journal, 1970
- Stacking Faults in Annealed Silicon SurfacesJournal of Applied Physics, 1969
- Growth of Lattice Defects in Silicon during OxidationJournal of Applied Physics, 1964