Lattice matching and dislocations in LPE in1−xGaxP1−zAsz—InP heterojunctions
- 1 December 1977
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 41 (2), 254-261
- https://doi.org/10.1016/0022-0248(77)90053-7
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Near-infrared In1-xGaxP1-zAszdouble-heterojunction lasers: Constant-temperature LPE growth and operation in an external-grating cavityIEEE Journal of Quantum Electronics, 1977
- 1500-h continuous cw operation of double-heterostructure GaInAsP/InP lasersApplied Physics Letters, 1977
- Limitations of the direct-indirect transition on In1−xGaxP1−zAsz heterojunctionsJournal of Applied Physics, 1977
- Growth and characterization of InGaAsP–InP lattice-matched heterojunctionsJournal of Vacuum Science and Technology, 1976
- Distribution coefficients of Ga, As, and P during growth of InGaAsP layers by liquid-phase epitaxyJournal of Crystal Growth, 1976
- Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μ mApplied Physics Letters, 1976
- Room-temperature operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μmApplied Physics Letters, 1976
- Spectral losses of low-OH-content optical fibresElectronics Letters, 1976
- In situ in etching technique for l.p.e. InPElectronics Letters, 1976
- Zero material dispersion in optical fibresElectronics Letters, 1975