Defect states associated with dislocations in silicon
- 1 January 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (1), 73-75
- https://doi.org/10.1063/1.90563
Abstract
The introduction and annealing of defect states in silicon stressed at 770 °C in compression have been studied by capacitance transient spectroscopy on Schottky‐barrier structures. High‐resistivity n‐type samples are converted to p type. Low resistivity n‐type samples are compensated but recover upon annealing. A large variety of defect states are observed with prominent features at E (0.68) after deformation. The spectra simplify upon annealing at 900 °C to two dominant states, E (0.38) and H (0.35).Keywords
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