Crystal growth, characterization and resistivity measurements of TiSi2 single crystals
- 31 December 1987
- journal article
- Published by Elsevier in Journal of the Less Common Metals
- Vol. 136 (1), 175-182
- https://doi.org/10.1016/0022-5088(87)90022-1
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Resistivity and magnetoresistance of high-purity monocrystalline MoSi2Journal of Physics F: Metal Physics, 1986
- Preparation of titanium disilicide single crystals by chemical vapour transport with halogensJournal of the Less Common Metals, 1986
- Molybdenum disilicide: Crystal growth, thermal expansion and resistivitySolid State Communications, 1985
- Fully relativistic self-consistent energy bands of WPhysical Review B, 1985
- Self-consistent semirelativistic energy bands ofPhysical Review B, 1985
- Refractory silicides for integrated circuitsJournal of Vacuum Science and Technology, 1980
- Growth and characterization of transition metal silicidesProgress in Crystal Growth and Characterization, 1979
- Integrated Intensities and Lattice Parameters for TiSi2Journal of the American Ceramic Society, 1978
- Transportreaktionen und einkristallzüchtung von siliciden der IVA-VIA metalleJournal of the Less Common Metals, 1971
- Electrical and thermal resistivity of the transition elements at low temperaturesPhilosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1959