Reduced-pressure MOCVD of highly crystalline BaTiO3 thin films
- 1 March 1992
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 7 (3), 542-545
- https://doi.org/10.1557/jmr.1992.0542
Abstract
Epitaxial BaTi3 films have been grown on NdGaO3 [100] substrates by reduced pressure MOCVD for the first time. The substrate temperature was 1000 °C and the total pressure was 4 Torr. Electron and x-ray diffraction measurements indicate highly textured, single phase films on the NdGaO3 substrate which are predominantly [100], with [110] also present. TEM and selected area electron diffraction (SAED) indicate two specific orientational relationships between the [110] and the [001] diffraction patterns.Keywords
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