Epitaxial yttria-stabilized zirconia on (11̄02)sapphire for YBa2Cu3O7−δ thin films
- 21 January 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (3), 304-306
- https://doi.org/10.1063/1.104669
Abstract
Epitaxial yttria‐stabilized zirconia (YSZ) films were deposited on (11̄02) sapphire by pulsed laser deposition. The films are formed in a cubic phase with the a axis normal to the substrate surface. Ion beam (2.8 MeV He++) channeling measurements show that the YSZ films are highly crystalline with a channeling minimum yield of 8%. The epitaxial relationship between the film and substrate is further confirmed by a cross‐section transmission electron microscopy study. Epitaxial YBa2Cu3O7−δ thin films deposited on YSZ/sapphire have Tc and Jc of up to 89 K and 1×106 A/cm2 at 77 K, respectively.Keywords
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