Y1Ba2Cu3O7−x thin films grown on sapphire with epitaxial MgO buffer layers
- 2 July 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (1), 90-92
- https://doi.org/10.1063/1.104238
Abstract
We have developed a process for growing as‐deposited Y1Ba2Cu3O7−x (YBCO) thin films on R‐plane sapphire substrates with an intermediate layer of epitaxial MgO. The orientation of the layers has YBCO (001) parallel to MgO (100) which is parallel to the substrate normal. These films are superconducting by 88.5 K and exhibit Jc=1×106 A/cm2 at 77 K and 2.5×107 A/cm2 at 4.2 K. The MgO layers may be grown at temperatures as low as 370 °C and are very stable in air. Little or no diffusion occurs between the substrate and the two layers as measured by Auger profiling.Keywords
This publication has 10 references indexed in Scilit:
- Properties of epitaxial YBa2Cu3O7 thin films on Al2O3 {1̄012}Applied Physics Letters, 1990
- Tunneling measurements on superconductor/insulator/superconductor junctions using single-crystal YBa2Cu3O7−x thin filmsApplied Physics Letters, 1990
- Multilayer YBa2Cu3Ox-SrTiO3-YBa2Cu3Ox films for insulating crossoversApplied Physics Letters, 1990
- YBa2Cu3O7 films grown on epitaxial MgO buffer layers on sapphirePhysica C: Superconductivity and its Applications, 1989
- Thin films of YBaCuO grown in-situ by co-evaporation and plasma oxidationPhysica C: Superconductivity and its Applications, 1989
- Superconducting YBa2Cu3O7−x thin films on alkaline earth fluoridesApplied Physics Letters, 1989
- Single target sputtering of superconducting YBa2Cu3O7−δ thin films on Si (100)Applied Physics Letters, 1989
- High critical currents in epitaxial YBa2Cu3O7−x thin films on silicon with buffer layersApplied Physics Letters, 1989
- Superconducting Y1Ba2Cu3O7−x films on SiApplied Physics Letters, 1988
- As-deposited superconducting Y-Ba-Cu-O thin films on Si, Al2O3, and SrTiO3 substratesApplied Physics Letters, 1988