Quasi-Schottky barrier diode on n-Ga0.47In0.53As using a fully depleted p+-Ga0.47In0.53As layer grown by molecular beam epitaxy
- 1 March 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (5), 401-403
- https://doi.org/10.1063/1.93117
Abstract
A quasi‐Schottky barrier diode made on n‐Ga0.47In0.53 As has been demonstrated. This device utilizes a fully depleted ultrathin p+‐Ga0.47In0.53 As layer grown by molecular beam epitaxy to increase the barrier height. An increase in the barrier height of 0.27 V, making the total barrier height 0.47 V, has been obtained. A low reverse leakage current and a hysteresis‐free capacitance‐voltage characteristic suggest that this structure should be useful as a current control gate for high speed field‐effect transistors.Keywords
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