Carrier transport in ordered and disordered In0.53Ga0.47As
- 10 February 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (6), 756-758
- https://doi.org/10.1063/1.118214
Abstract
Room temperature recombination dynamics have been studied in partially ordered and disordered ternary alloys of In0.53Ga0.47As by correlated measurements of transmission electron diffraction and photoconductive decay. Ultrahigh frequency photoconductive decay measurements show that pulsed yttrium-aluminum-garnet laser-induced excess carriers in disordered films decay by conventional mechanisms such as the Shockley–Read–Hall effect. In highly ordered ternaries, recombination of excess carriers is retarded by some mechanisms such as charge separation. Excess carrier lifetimes exceeding several hundred microseconds have been observed.Keywords
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