Band-gap narrowing in ordered Ga0.47In0.53As
- 12 April 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (15), 1806-1808
- https://doi.org/10.1063/1.109640
Abstract
We report the first observation of band‐gap energy reduction in Ga0.47In0.53As deposited on (100) InP by atmospheric pressure organometallic vapor phase epitaxy due to CuPt‐type ordering. A reduction of more than 65 meV in the band‐gap energy is observed for lattice‐matched samples that show strong CuPt‐like ordering by transmission electron microscopy. By comparison samples that show no CuPt‐like ordering diffraction signatures, do not have reduced band‐gap energies. Studies of the influence of growth parameters on the band‐gap energy indicate a U‐shaped dependence on the growth temperature with a minimum around 550 °C and decreasing band‐gap energies with increasing growth rate (at a constant V/III ratio) over the range 0.5–4 μm/h.Keywords
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