Evidence of no k-selection in gain spectra of quantum well AlGaAs laser diodes
- 1 January 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 21 (1), 24-28
- https://doi.org/10.1109/jqe.1985.1072535
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Confined carrier quantum states in ultrathin semiconductor heterostructuresPublished by Springer Nature ,2007
- Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs SuperlatticesJapanese Journal of Applied Physics, 1983
- Gain and carrier lifetime measurements in AlGaAs single quantum well lasersIEEE Journal of Quantum Electronics, 1983
- Graded barrier single quantum well lasers - Theory and experimentIEEE Journal of Quantum Electronics, 1983
- Spectrum studies on a GaAs-AlGaAs multi-quantum-well laser diode grown by molecular beam epitaxyJournal of Applied Physics, 1983
- Structure-dependent threshold current density in InGaAsP quantum well lasersApplied Physics Letters, 1983
- Gain spectra of quantum-well lasersElectronics Letters, 1983
- Polarisation-dependent gain-current relationship in GaAs-AlGaAs MQW laser diodesElectronics Letters, 1983
- Size fluctuations and high-energy laser operation of AlxGa1−xAs-AlAs-GaAs quantum-well heterostructuresJournal of Applied Physics, 1981
- Band Structure and Pseudopotential Form Factors for AlAsPhysica Status Solidi (b), 1973