Plasma oxidation of GaAs
- 1 July 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (1), 56-58
- https://doi.org/10.1063/1.88872
Abstract
A new process for plasma oxidation of GaAs has been developed. Oxide films formed by this simple one‐step dry process have amorphous structure, with composition and thickness uniformity better than ±10% over areas ≲1 cm2. They have a gallium‐to‐arsenic ratio of nearly one. The electrical properties (I‐V, C‐V) of the films are such that this process may be useful in device fabrication.Keywords
This publication has 9 references indexed in Scilit:
- MOS (Si‐Gate) Compatibility of RF Diode and Triode Sputtering ProcessesJournal of the Electrochemical Society, 1976
- Lower-Hybrid Beam-Plasma InstabilityPhysical Review Letters, 1975
- New anodic native oxide of GaAs with improved dielectric and interface propertiesApplied Physics Letters, 1975
- Thermal oxidation of GaAsApplied Physics Letters, 1975
- Oxidation of GaAs1 − x
P
x
Surface by Oxygen Plasma and Properties of Oxide FilmJournal of the Electrochemical Society, 1974
- The Anodic Oxidation of GaAs in Aqueous H[sub 2]O[sub 2] SolutionJournal of the Electrochemical Society, 1973
- Oxide Films Grown on GaAs in an Oxygen PlasmaJournal of Applied Physics, 1966
- Silicon Oxidation in an Oxygen Plasma Excited by MicrowavesJournal of Applied Physics, 1965
- An Amorphous Modification of Gallium‐Arsenic (V) OxideJournal of the American Ceramic Society, 1963