Creation of radiative hydrogen-related states within strained InxGa1-xAs/GaAs quantum wells by hydrogenation
- 31 January 1992
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 81 (1), 125-128
- https://doi.org/10.1016/0038-1098(92)90585-w
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Picosecond spectroscopy of hydrogenated MBE-GaAsPhysica B: Condensed Matter, 1991
- The molecular beam epitaxial growth of GaAs on Si(100): a variable growth temperature studyJournal of Crystal Growth, 1991
- Effects of different processes with hydrogen on the photoluminescence of GaAlAs:Si grown by molecular beam epitaxyApplied Physics Letters, 1990
- Hydrogen neutralization of acceptors in highly doped GaInAs:ZnApplied Physics Letters, 1990
- Characterization of the MBE growth of GaAs/Si(100) as a function of epilayer thicknessJournal of Crystal Growth, 1990
- Effect of hydrogen implantation on shallow and deep levels in GaAs growth by molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1989
- Depth dependence of silicon donor passivation and reactivation in hydrogenated GaAsApplied Physics Letters, 1989
- Hydrogen passivation of C acceptors in high-purity GaAsApplied Physics Letters, 1987
- Bound excitons in Si-doped GaAs/Al0.22Ga0.78As single quantum wellsJournal of Applied Physics, 1985
- Bound excitons in p-doped GaAs quantum wellsSolid State Communications, 1982