Thin nitride films on textured polysilicon to increase multimegabit DRAM cell charge capacity
- 1 July 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (7), 279-281
- https://doi.org/10.1109/55.56474
Abstract
A technique for increasing the charge storage capacity of advanced multimegabit dynamic RAMs (DRAMs) up to 34% without changing the cell area or dielectric thickness is discussed. The technique does not require an additional masking step. A polysilicon texturing process is combined with a dielectric which has bulk-limited electrical conduction. The leakage current is not affected by this process, and the field acceleration coefficient is considerably increased.Keywords
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