A corrugated capacitor cell (CCC)
- 1 June 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 31 (6), 746-753
- https://doi.org/10.1109/t-ed.1984.21602
Abstract
A new MOS dynamic random access memory (dRAM) cell named "CCC" has been successfully developed based on a one-device cell concept. This CCC is characterized by an etched-moat storage-capacitor extended into the substrate, resulting in almost independent increase in storage capacitance CSof its cell size. A typical CSvalue of 60 fF has been obtained with 3 × 7 µm2CCC having a 4-µm deep moat and a capacitor insulator equivalent to 15 nm SiO2in thickness. The CCC is discussed in terms of its capacitance characteristics, dRAM operation with unit 32-Kbit array, some limiting factor to its closer packing, and future considerations.Keywords
This publication has 10 references indexed in Scilit:
- Circuit techniques for a VLSI memoryIEEE Journal of Solid-State Circuits, 1983
- A corrugated capacitor cell (CCC) for megabit dynamic MOS memoriesIEEE Electron Device Letters, 1983
- A corrugated capacitor cell (CCC) for megabit dynamic MOS memoriesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1982
- Intermediate Oxide Formation in Double‐Polysilicon Gate MOS StructureJournal of the Electrochemical Society, 1980
- A single 5V 64K dynamic RAMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1980
- One-device cells for dynamic random-access memories: A tutorialPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979
- Alpha-particle-induced soft errors in dynamic memoriesIEEE Transactions on Electron Devices, 1979
- A numerical model of avalanche breakdown in MOSFET'sIEEE Transactions on Electron Devices, 1978
- A 16K dynamic RAMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1976
- Three-transistor-cell 1024-bit 500-ns MOS RAMIEEE Journal of Solid-State Circuits, 1970