Melting phenomenon and properties of defects associated with pulsed laser irradiation†
- 1 June 1981
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 43 (6), 1515-1535
- https://doi.org/10.1080/01418618108239525
Abstract
The phenomenon of melting produced by pulsed laser irradiation in silicon has been studied using electron microscopy. Removal of dopant precipitates, dislocations or loops provides clear evidence for melting. From the thickness of defect-free regions and the length of reoriented segments of dislocations, the depth of melting can be determined as a function of laser parameters. Using this technique, the depth of melting underneath the oxide layers has been investigated. Cellular structures observed in ion-implanted, laser-annealed specimens also provide convincing evidence of melting during pulsed laser irradiation.Keywords
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