Observation and analysis of very rapid optical degradation of GaAs/GaAlAs DH laser material
- 1 November 1976
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (9), 605-607
- https://doi.org/10.1063/1.89159
Abstract
We have observed and analyzed a very rapid form of degradation caused by the optical excitation of GaAs/GaAlAs DH laser material. It consists of the very rapid (50 μ/sec) development of 〈110〉‐oriented lines originating at a mechanically damaged area and restricted to the optically excited area. TEM analysis shows that the degraded region consists of an orthogonal array of misfit dislocations of 60° type at the interface between the p‐ternary layer and the active region. It seems likely that the dislocations are generated by glide as a result of the lattice misfit stress between GaAs and GaAlAs and that their energy of motion is supplied through nonradiative recombination events.Keywords
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