Heavy Metal Gettering by an Intrinsic Gettering Technique Using Microdefects in Czochralski-Grown Silicon Wafers
- 1 August 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (8), L466-468
- https://doi.org/10.1143/jjap.19.l466
Abstract
The ability of an intrinsic gettering (IG) using microdefects in Czochralski silicon wafers is verified on copper diffused wafers with the help of a neutron activation analysis (NAA). The IG technique used here is an improved double preannealing technique. It is ascertained that the copper concentration is enhanced in the bulk region where a high density of microdefects were induced. Moreover, the concentration in the denuded zone near the surface is proved to be below the detection limit of the NAA technique.Keywords
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