Suppression of oxidation-stacking-fault generation by preannealing in N2 atmosphere
- 1 January 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (1), 1-3
- https://doi.org/10.1063/1.89831
Abstract
Suppression of oxidation‐stacking‐fault (OSF) generation is studied by x‐ray section topography, etching technique, and transmission electron microscopy (TEM). Microdefects (MD’s) are generated in bulk Si during N2 atmosphere annealing at about 1000–1100 °C, and their generation is confined to the inner part of the Si wafer. These MD’s grow rapidly during subsequent oxidation. The grown MD’s contribute to stacking faults (SF’s) in the inner part of bulk Si. On the contrary, surface OSF’s are not introduced by the subsequent oxidation because no MD’s are generated in the surface layer by the preannealing. The suppression effect of OSF generation by N2 atmosphere preannealing is demonstrated using several samples.Keywords
This publication has 13 references indexed in Scilit:
- Shrinkage and annihilation of stacking faults in siliconJournal of Vacuum Science and Technology, 1977
- Nucleation of stacking faults at oxide precipitate-dislocation complexes in siliconApplied Physics Letters, 1976
- Characterization of structural defects in annealed silicon containing oxygenJournal of Applied Physics, 1976
- Stacking Fault Generation Suppression and Grown-In Defect Elimination in Dislocation Free Silicon Wafers by HCl OxidationJapanese Journal of Applied Physics, 1976
- Elimination of Oxidation‐Induced Stacking Faults by Preoxidation Gettering of Silicon Wafers: I . Phosphorus Diffusion‐Induced Misfit DislocationsJournal of the Electrochemical Society, 1975
- Formation and elimination of growth striations in dislocation-free silicon crystalsJournal of Crystal Growth, 1975
- Silicon Wafer Annealing Effect in Loop Defect GenerationJapanese Journal of Applied Physics, 1974
- Stacking faults in (100) epitaxial silicon caused by HF and thermal oxidation and effects on p-n junctionsJournal of Applied Physics, 1972
- The Effect of HCl and Cl[sub 2] on the Thermal Oxidation of SiliconJournal of the Electrochemical Society, 1972
- Effect of Crystal Orientation on the Stacking Fault Formation in Thermally Oxidized SiliconJournal of Applied Physics, 1971