Reaction pathways in remote plasma nitridation of ultrathin SiO2 films
- 1 January 2002
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 91 (1), 48-55
- https://doi.org/10.1063/1.1419208
Abstract
Low-temperature nitridation of 3 nm films using and remote radio frequency (rf) plasmas was investigated. On-line Auger electron spectroscopy and angle-resolved x-ray photoelectron spectroscopy (ARXPS) were employed to determine the concentration, spatial distribution, and local chemical bonding of nitrogen in the resultant films. Experiments were performed using a substrate temperature of 300 °C and 30 W rf power. Nitridation using an upstream remote plasma at 0.1 Torr incorporates nitrogen at the top surface of the film. In contrast, a lower concentration of nitrogen distributed throughout the film is obtained when the process pressure is increased to 0.3 Torr. ARXPS indicates a local bonding configuration, irrespective of the spatial distribution of N atoms. Slightly more nitrogen is incorporated using a downstream plasma at each process pressure. By comparison, nitridation of films using a remote plasma at 0.1 Torr is very slow. Optical emission spectroscopy indicates that He dilution enhances the generation of species by altering the plasma electron energy distribution and by providing an additional kinetic pathway (Penning ionization). Changing the remote plasma configuration from upstream to downstream (at 0.1 and 0.3 Torr) also enhances generation. For upstream remote plasmas, the intensity of first positive emission from states increases with pressure, whereas the first negative emission from states decreases. We infer from these observations that species are primarily responsible for top surface nitridation at 0.1 Torr, and that neutral species metastables and N atoms] are associated with sub-surface nitrogen incorporation.
Keywords
This publication has 21 references indexed in Scilit:
- Doping of n/sup +/ and p/sup +/ polysilicon in a dual-gate CMOS processPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Impact of boron diffusion through O/sub 2/ and N/sub 2/O gate dielectrics on the process margin of dual-poly low power CMOSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Monolayer-level controlled incorporation of nitrogen at Si–SiO2 interfaces using remote plasma processingJournal of Vacuum Science & Technology A, 1999
- Boron Diffusion in Silicon Oxides and OxynitridesJournal of the Electrochemical Society, 1998
- Physical Models of Boron Diffusion in Ultrathin Gate OxidesJournal of the Electrochemical Society, 1997
- Degradation of oxynitride gate dielectric reliability due to boron diffusionApplied Physics Letters, 1996
- Controlled nitrogen incorporation at the gate oxide surfaceApplied Physics Letters, 1995
- Electrical characteristics of rapid thermal nitrided-oxide gate n- and p-MOSFET's with less than 1 atom% nitrogen concentrationIEEE Transactions on Electron Devices, 1994
- The effects of boron penetration on p/sup +/ polysilicon gated PMOS devicesIEEE Transactions on Electron Devices, 1990
- Design tradeoffs between surface and buried-channel FET'sIEEE Transactions on Electron Devices, 1985