Electrical characteristics of rapid thermal nitrided-oxide gate n- and p-MOSFET's with less than 1 atom% nitrogen concentration
- 1 April 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (4), 546-552
- https://doi.org/10.1109/16.278508
Abstract
No abstract availableKeywords
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