Localized Mode Measurements of Boron- and Lithium-Doped Silicon
- 1 August 1965
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 36 (8), 2450-2453
- https://doi.org/10.1063/1.1714509
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- Observation of ion-pairs in aqueous solutions by vibrational spectroscopyAustralian Journal of Chemistry, 1964
- Electrical Properties of Heavily Doped SiliconJournal of Applied Physics, 1963
- Vibrational absorption of substitutional boron and phosphorus in siliconPhysics Letters, 1963
- Theory of Optical Absorption by Vibrations of Defects in SiliconProceedings of the Physical Society, 1963
- Lattice Absorption Bands in SiliconProceedings of the Physical Society, 1959
- Solubility of lithium in siliconJournal of Physics and Chemistry of Solids, 1957
- Chemical Interactions Among Defects in Germanium and SiliconBell System Technical Journal, 1956