Two-Dimensional Numerical Analysis of Amorphous-Silicon Field-Effect Transistors

Abstract

A two-dimensional transistor model for short-channel amorphous-silicon (a-Si) field-effect transistors has been developed, taking the localized states in a-Si into account, and the basic characteristics of the transistors have been clarified by numerical computation. The mechanisms determining the short-channel transistor performance have been discussed. It is predicted that a 1 µm transistor with satisfactory performance can be fabricated by thinning the active a-Si region to 20 nm.