Si deposition by electron beam induced surface reaction
- 17 October 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (16), 1492-1494
- https://doi.org/10.1063/1.100465
Abstract
Si deposition has been achieved by electron beam induced surface reaction. An initial growth process for Si deposition using SiH2Cl2 source gas has been observed in situ by Auger electron spectroscopy. As a result, it became clear that the Si deposition growth rate is ∼0.3 Å/min at 7×10−7 Torr and that the deposition film contents (at. %) are 89% Si, 9.1% O, and 1.9% Cl. Moreover, a 0.5 μm linewidth Si pattern has been demonstrated by direct writing, using electron beam induced surface reaction.Keywords
This publication has 7 references indexed in Scilit:
- I n s i t u observation on electron beam induced chemical vapor deposition by Auger electron spectroscopyApplied Physics Letters, 1987
- New selective deposition technology by electron-beam induced surface reactionJournal of Vacuum Science & Technology B, 1986
- Photodeposition of metal films with ultraviolet laser lightJournal of Vacuum Science and Technology, 1982
- Electron-beam fabrication of 80-Å metal structuresApplied Physics Letters, 1976
- Auger electron spectroscopyContemporary Physics, 1973
- Quantitative Auger electron spectroscopy and electron rangesSurface Science, 1972
- A simple model for the dependence of Auger intensities on specimen thicknessSurface Science, 1969