Double Heterojunction AlGaAsP Quaternary Lasers
- 15 July 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 19 (2), 25-28
- https://doi.org/10.1063/1.1653807
Abstract
Stimulated emission in AlGaAsP is demonstrated. Double heterojunction AlGaAsP lasers grown from Ga solution on GaAsP substrates exhibit 300 °K thresholds as low as 104 A/cm2 (∼ 8450 Å) and shift ∼ 450 Å to shorter wavelength at 77 °K. In spite of its more complicated crystalline structure, solution‐grown AlGaAsP appears to exceed in quality vapor‐grown GaAsP.Keywords
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