AlxGa1−xAs1−y′P y′–GaAs1−yPy HETEROSTRUCTURE LASER AND LAMP JUNCTIONS

Abstract

A method is described to grow successfully from solution Al_xGa_1−xAs_1−y′P _y′ (p‐type) on GaAs_1−yP_y (n‐type), to preserve the lattice match (y′ ≈ y), and to obtain the improved heterostructure junction devices previously realized only in the AlGaAs/GaAs system. Although not optimized, these structures have been operated as pulsed room‐temperature lasers, and because of an inherent wide‐gap window can be used conveniently for optical purposes and for excess carrier lifetime measurements. Carrier lifetime measurements, for example, indicate freedom from defects at the AlGaAsP/GaAsP barrier.