Magnetophonon Resonance of Hot Electrons in-InSb at 77°K
- 24 April 1972
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 28 (17), 1129-1132
- https://doi.org/10.1103/physrevlett.28.1129
Abstract
Magnetophonon resonances in the hot-electron mobility have been observed in pure -InSb at 77°K in transverse magnetic fields with the application of sufficiently small voltage to produce a slight change in the mobility. The minima in the quantity in the formula are attributed to resonant cooling of hot electrons due to optical-phonon-induced transitions between Landau levels.
Keywords
This publication has 13 references indexed in Scilit:
- The temperature dependence of the band-edge effective masses of InSb, InAs and GaAs as deduced from magnetophonon magnetoresistance measurementsJournal of Physics C: Solid State Physics, 1970
- Magnetophonon Resonances in Acoustoelectric Gain in-InSbPhysical Review Letters, 1970
- The magnetophonon effect in III-V semiconducting compoundsJournal of Physics C: Solid State Physics, 1968
- Electron temperature in polar semiconductorsPhysica Status Solidi (b), 1968
- Non-Ohmic Properties in n-Type InSbJournal of the Physics Society Japan, 1967
- Scattering mechanisms in indium antimonide at low temperaturesBritish Journal of Applied Physics, 1966
- Method for Measuring Small Nonlinearities of Electric CharacteristicsReview of Scientific Instruments, 1965
- Temperature Dependence of Mobility of Warm Carriers in Germanium and SiliconJournal of the Physics Society Japan, 1963
- Quadratic Deviations from Ohm's Law in-Type InSbPhysical Review B, 1960
- The Change in Electron Mobility in Indium Antimonide at Low Electric FieldJournal of the Physics Society Japan, 1960