Effect of growth temperature on the properties of p-type GaN grown by plasma-assisted molecular beam epitaxy
- 2 December 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 182 (3-4), 241-246
- https://doi.org/10.1016/s0022-0248(97)00380-1
Abstract
No abstract availableKeywords
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