Impurity levels in phosphorus- and boron-doped amorphous silicon
- 27 September 1997
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 76 (3), 281-285
- https://doi.org/10.1080/01418639708241093
Abstract
The AMI semiempirical quantum-chemical method has been used to investigate phosphorus and boron-doped amorphous silicon. A simple relationship for the determination of midgap energy levels is proposed for substitutionally doped amorphous silicon as a function of distances between dopants.Keywords
This publication has 7 references indexed in Scilit:
- Amorphous clusters. III. The electronic structure of Si clusters with B and Al impuritiesJournal of Non-Crystalline Solids, 1995
- Amorphous clusters I. Electronic structure of Si clusters with N, P and As dopantsJournal of Non-Crystalline Solids, 1992
- Hydrogenated Amorphous SiliconPublished by Cambridge University Press (CUP) ,1991
- Neutron-diffraction study of the structure of evaporated pure amorphous siliconPhysical Review B, 1989
- Computer Generation of Structural Models of Amorphous Si and GePhysical Review Letters, 1985
- Substitutional doping of amorphous siliconSolid State Communications, 1975
- Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond StructurePhysical Review B, 1966