Growth of Cubic Boron Nitride Films by Low-Pressure Inductively Coupled Plasma Enhanced Chemical Vapor Deposition
- 1 July 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (7S)
- https://doi.org/10.1143/jjap.33.4385
Abstract
Cubic boron nitride ( c-BN) films were deposited on silicon (100) wafer substrates from the B2H6+N2+He+Ar system at pressures ranging from 5×10-4–2×10-3 Torr by low-pressure inductively coupled plasma enhanced chemical vapor deposition (ICP-CVD). The substrate bias was controlled by varying auxiliary rf power to the substrate. The effects of the process parameters such as substrate bias and working pressure on the c-BN growth have mainly been investigated. The results are discussed in relation to the plasma diagnostics by electric probe and optical emission spectroscopy.Keywords
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