Direct Determination of Sizes of Excitations from Optical Measurements on Ion-Implanted GaAs

Abstract

Using a simple model that describes the decrease of the amplitudes of optical structures in ion-implanted crystals, projected areas of several valence and core excitons in GaAs are determined. The last remnant of crystal-related optical structure vanishes for crystallite areas less than ${\left(16\mathrm{\AA }\right)}^2$.