High-temperature operation of 1.3 [micro sign]m AlGaInAs strained multiple quantum well lasers
- 1 January 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (12), 1231-1233
- https://doi.org/10.1049/el:19980876
Abstract
High-temperature operation of 1.3 µm AlGaInAs/InP strained multiple quantum well lasers is demonstrated. An excellent CW characteristic temperature of 111 K was obtained between 20 and 80°C and a record high operating temperature of 210°C was achieved with a 700 µm long laser under pulse excitation. Power reductions at a constant current with increasing temperature were also evaluated at 80°C to be –1.27 and –1.67 dB under pulse and CW excitations, respectively.Keywords
This publication has 5 references indexed in Scilit:
- High temperature operation of AlGaInAs/InP lasersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 1.3-μm AlGaInAs-AlGaInAs strained multiple-quantum-well lasers with a p-AlInAs electron stopper layerIEEE Photonics Technology Letters, 1998
- Power penalty in 1.3-μm InP-based strained-layer multiple-quantum-well lasers at elevated temperaturesIEEE Photonics Technology Letters, 1997
- Low-threshold and high-temperature operation of InGaAlAs-InP lasersIEEE Photonics Technology Letters, 1997
- High-performance uncooled 1.3-μm Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applicationsIEEE Journal of Quantum Electronics, 1994