High indium metamorphic HEMT on a GaAs substrate
- 1 April 2003
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 251 (1-4), 827-831
- https://doi.org/10.1016/s0022-0248(02)02373-4
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Reliability of metamorphic HEMTs on GaAs substratesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High-frequency metamorphic p-i-n photodiodes and high-electron mobility transistor transimpedance amplifiers: Candidates for fiber-optic communicationsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002
- Simultaneous determination of Poisson ratio, bulk lattice constant, and composition of ternary compounds: In0.3Ga0.7As, In0.3Al0.7As, In0.7Ga0.3P, and In0.7Al0.3PApplied Physics Letters, 2001
- Molecular beam epitaxial growth and characterization of strain-compensated Al0.3In0.7P/InP/Al0.3In0.7P metamorphic–pseudomorphic high electron mobility transistors on GaAs substratesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001
- Reliability of InAlAs/InGaAs HEMTs grown on GaAs substrate with metamorphic bufferMicroelectronics Reliability, 2000
- Electrical properties of modulation-doped InxAl1−xAs/InyGa1−yAs structures on GaAs and InP substrates with 0.2⩽x, y⩽0.8Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000
- Double-doped In/sub 0.35/Al/sub 0.65/As/In/sub 0.35/Ga/sub 0.65/As power heterojunction FET on GaAs substrate with 1 W output powerIEEE Electron Device Letters, 1999
- Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substratesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999
- Metamorphic In/sub 0.4/Al/sub 0.6/As/In/sub 0.4/Ga/sub 0.6/As HEMTs on GaAs substrateIEEE Electron Device Letters, 1999
- High-quality InxGa1−xAs/InAlAs modulation-doped heterostructures grown lattice-mismatched on GaAs substratesJournal of Crystal Growth, 1991