High-quality InxGa1−xAs/InAlAs modulation-doped heterostructures grown lattice-mismatched on GaAs substrates
- 1 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4), 313-317
- https://doi.org/10.1016/0022-0248(91)90992-e
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Lattice-Mismatched Growth and Transport Properties of InAlAs/InGaAs Heterostructures on GaAs SubstratesJapanese Journal of Applied Physics, 1989
- In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistor on GaAs by molecular beam epitaxyApplied Physics Letters, 1988
- A 0.1- mu m gate Al/sub 0.5/In/sub 0.5/As/Ga/sub 0.5/In/sub 0.5/As MODFET fabricated on GaAs substratesIEEE Transactions on Electron Devices, 1988
- An iterative calculation of galvanomagnetic coefficients and a.c. conductivity of polar semiconductorsJournal of Physics C: Solid State Physics, 1974
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967