The effect of CdTe substrate orientation on the Movpe growth of CdxHg1−xTe
- 1 December 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 79 (1-3), 940-945
- https://doi.org/10.1016/0022-0248(86)90576-2
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Structural properties of crystals of CdTe grown from the vapour phaseJournal of Crystal Growth, 1985
- The incidence of voids in vapour grown CdS crystalsJournal of Crystal Growth, 1985
- Hg1−xCdxTe-Hg1−yCdyTe (0≤x, y≤1) heterostructures: Properties, epitaxy, and applicationsJournal of Applied Physics, 1985
- MOCVD growth of CdTe and HgCdTeJournal of Vacuum Science & Technology A, 1985
- Metalorganic growth of high-purity HgCdTe filmsApplied Physics Letters, 1984
- Implementation of a computer-controlled MOVPE system to grow epitaxial CMTJournal of Crystal Growth, 1984
- A new MOVPE technique for the growth of highly uniform CMTJournal of Crystal Growth, 1984
- The growth by MOVPE and characterisation of CdxHg1−xTeJournal of Crystal Growth, 1981