Metalorganic growth of high-purity HgCdTe films

Abstract

Epitaxial films of HgCdTe have been grown by metalorganic chemical vapor deposition. Diethyltelluride, dimethylcadmium, and elemental mercury were used as the starting reagents. For Hg1−xCdxTe compositions with x≤0.2, the films are n type at 300 and 77 K. From Hall measurements at 77 K a minimum carrier concentration of 1.0×1015 cm−3 and maximum mobility of 590 000 cm2/Vs were measured. Epitaxial films with x≊0.3 were also grown. The films are n type at 300 K but exhibit p-type behavior at 77 K. p-type carrier concentrations less than 5×1015 cm−3 were attained.