High-speed optical response of pseudomorphic InGaAs high electron mobility transistors
- 1 September 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 4 (9), 1012-1014
- https://doi.org/10.1109/68.157132
Abstract
The optical responses of very high-frequency pseudomorphic InGaAs HEMTs with f/sub T/ of 140 GHz were obtained. These measurements were done using the picosecond time domain optoelectronic technique at room and low temperatures. The optical photovoltaic responses of these HEMTs show FWHM values of 8.4 and 7.5 ps at room temperature and 20 K, respectively. Photoconductive responsivity as high as 4 A/W with an external quantum efficiency of >600% is reported.Keywords
This publication has 9 references indexed in Scilit:
- Ultralow-noise W-band pseudomorphic InGaAs HEMT'sIEEE Electron Device Letters, 1990
- Picosecond optoelectronic measurement of S parameters and optical response of an AlGaAs/GaAs HBTIEEE Transactions on Microwave Theory and Techniques, 1990
- Microwave Performance of an Optically Controlled AIGaAs/GaAs High Electron Mobility Transistor and GaAs MESFETIEEE Transactions on Microwave Theory and Techniques, 1987
- Picosecond HEMT PholodetectorJapanese Journal of Applied Physics, 1986
- Picosecond Optoelectronic Sampling of Electrical Waveforms Produced by an Optically Excited Field Effect TransistorPublished by Springer Nature ,1986
- Transient capacitance spectroscopy on large quantum well heterostructuresJournal of Applied Physics, 1983
- Ultrahigh speed modulation-doped heterostructure field-effect photodetectorsApplied Physics Letters, 1983
- The OPFET: A new high speed optical detectorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1978
- GaAs m.e.s.f.e.t.: a high-speed optical detectorElectronics Letters, 1977