Absence of substrate roughness effects on an all-printed organic transistor operating at one volt
- 4 August 2008
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 93 (5), 053302
- https://doi.org/10.1063/1.2958225
Abstract
A hygroscopic insulatortransistor (HIFET) operating at 1 V was manufactured using roll-to-roll techniques on a rough, low-cost plastic substrate. The effects of the substrate roughness on the active channel were studied by using two different plastic substrates and comparing HIFETs and organic field-effect transistors(OFETs). We found that the HIFET, as opposed to OFETs, is rather insensitive to changes in the roughness of plastic substrates. Hence, a robust feature of ion modulated transistors is shown.Keywords
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